View STW70N60M2_8304999.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. september 2014 docid024327 rev 4 1/13 13 STW70N60M2 n-channel 600 v, 0.03 typ., 68 a mdmesh? m2 power mosfet in a to-247 package datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? excellent output capacitance (c oss ) profile ? 100% avalanche tested ? zener-protected applications ? switching applications description this device is an n-channel power mosfet developed using mdmesh? m2 technology. thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. d(2) g(1) s(3) am01476v1 1 2 3 to-247 order codes v ds @ t jmax r ds(on) max i d STW70N60M2 650 v 0.040 ? 68 a table 1. device summary order codes marking package packaging STW70N60M2 70n60m2 to-247 tube www.st.com
contents STW70N60M2 2/13 docid024327 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024327 rev 4 3/13 STW70N60M2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 68 a i d drain current (continuous) at t c = 100 c 43 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 272 a p tot total dissipation at t c = 25 c 450 w dv/dt (2) 2. i sd 68 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd = 400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.28 c/w r thj-amb thermal resistance junction-ambient max 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 10 a e as single pulse avalanche energy (starting t j =25c, i d = 10 a; v dd =50) 1500 mj
electrical characteristics STW70N60M2 4/13 docid024327 rev 4 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v 1 a v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 34 a 0.030 0.040 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 5200 - pf c oss output capacitance - 250 - pf c rss reverse transfer capacitance -5-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 395 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 3.3 - q g total gate charge v dd = 480 v, i d = 68 a, v gs = 10 v (see figure 15 ) -118-nc q gs gate-source charge - 25 - nc q gd gate-drain charge - 47 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 34 a, r g = 4.7 ? , v gs = 10 v (see figure 14 and figure 19 ) -32-ns t r rise time - 17 - ns t d(off) turn-off-delay time - 155 - ns t f fall time - 9 - ns
docid024327 rev 4 5/13 STW70N60M2 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 68 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 272 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 68 a, v gs = 0 - 0.98 1.6 v t rr reverse recovery time i sd = 68 a, di/dt = 100 a/s v dd = 60 v (see figure 18 ) - 520 ns q rr reverse recovery charge - 12 c i rrm reverse recovery current - 45 a t rr reverse recovery time i sd = 68 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 18 ) - 680 ns q rr reverse recovery charge - 18 c i rrm reverse recovery current - 50 a
electrical characteristics STW70N60M2 6/13 docid024327 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 10ms 1ms 0.1 tj=150c tc = 2 5 c single pulse 10s 100 100 am17966v1 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse =0.5 zth=k rthj-c d =tp/ t tp t am09125v1 i d 150 90 30 0 0 4 v ds (v) 8 (a) 12 3v v gs =7, 8, 9, 10v 60 120 4v 6v 5v 16 am17967v1 i d 120 60 0 0 4 v gs (v) 8 (a) 2 6 30 90 150 v ds =17v am17968v1 v gs 6 4 2 0 0 40 q g (nc) (v) 120 8 60 80 10 v dd =480v i d =68a 300 200 100 0 400 500 v ds 20 100 v ds (v) am17969v1 r ds(on) 0.03 0.0295 0.029 0 20 i d (a) ( ) 10 30 0.0305 v gs =10v 40 50 0.031 0.0315 60 am17970v1
docid024327 rev 4 7/13 STW70N60M2 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v ds vs temperature figure 13. source-drain diode forward characteristics c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am17971v1 e oss 20 10 0 0 100 v ds (v) ( j) 400 200 300 30 500 am17972v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) 1 50 100 i d =250 a 1.1 am17973v1 r ds(on) 1.8 1 0.2 -50 0 t j (c) (norm) 50 100 0.6 1.4 2.2 am17974v1 i d =34a v ds -50 0 t j (c) (norm) 50 100 0.89 0.93 0.97 1.01 1.05 1.09 i d =1ma am15975v1 v sd 0 20 i sd (a) (v) 10 50 30 40 0.5 0.6 0.7 0.8 t j =-50c t j =150c t j =25c 0.9 1 60 am17976v1
test circuits STW70N60M2 8/13 docid024327 rev 4 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024327 rev 4 9/13 STW70N60M2 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark.
package mechanical data STW70N60M2 10/13 docid024327 rev 4 figure 20. to-247 drawing 0075325_g
docid024327 rev 4 11/13 STW70N60M2 package mechanical data table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
revision history STW70N60M2 12/13 docid024327 rev 4 5 revision history table 10. document revision history date revision changes 28-feb-2013 1 first release. 13-mar-2013 2 ? minor text changes ? modified: test condition in table 7 12-dec-2013 3 ? modified: title ? modified: table 4 , r ds(on) typical value in table 5 , the entire typical values in table 6 , 7 and 8 ? updated: section 3: test circuits ? added: section 2.1: electrical characteristics (curves) ? minor text changes 01-sep-2014 4 ? updated values in table 4 ? updated description and features in cover page ? minor text changes
docid024327 rev 4 13/13 STW70N60M2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2014 stmicroelectronics ? all rights reserved

▲Up To Search▲

Price & Availability of STW70N60M2

	To Download STW70N60M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .